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| INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1741 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= -60V(Min) *High DC Current Gain: hFE= 100(Min)@ (VCE= -2V , IC= -1A) *Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) B APPLICATIONS *This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Total Power Dissipation @TC=25 VALUE -100 -60 -7.0 -5.0 -10 -2.5 25 UNIT V V V A A A PT Total Power Dissipation @Ta=25 TJ Tstg Junction Temperature Storage Temperature 2.0 150 -55~150 W INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEX(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICER ICEX IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= -3.0A ; IB= -0.3A, L= 1mH IC= -3.0A ; IB1=-IB2= -0.3A, VBE(OFF)=1.5V, L=180H,clamped IC= -3A; IB= -0.15A B 2SA1741 MIN -60 -60 TYP. MAX UNIT V V -0.3 -0.5 -1.2 -1.5 -10 -1.0 -10 -1.0 -10 100 100 60 130 80 400 V V V V A mA A mA A IC= -4A; IB= -0.2A B IC= -3A; IB= -0.15A B IC= -4A; IB= -0.2A B VCB= -60V ; IE=0 VCE= -60V ; RBE= 50,Ta=125 VCE= -60V; VBE(off)= -1.5V VCE= -60V; VBE(off)= -1.5V,Ta=125 VEB= -5V; IC=0 IC= -0.5A ; VCE= -2V IC= -1.0A ; VCE= -2V IC= -3.0A ; VCE= -2V IE=0 ; VCB= -10V;f= 1.0MHz IC=-0.5A ; VCE= -10V pF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= -3.0A ,RL= 17, IB1= -IB2= -0.15A,VCC-50V 0.3 1.5 0.3 s s s hFE-2 Classifications M 100-200 L 150-300 K 200-400 2 INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1741 3 |
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